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SILICON BIDIRECTIONAL DIACS

ABSOLUTE RATINGS

Parameters Symbols

 

 Value UNITS

 
DB3 DB4 DB6
Power Dissipation on Printed                

Circuit    (L=10mm)   

 TA=50°C  Pc 150 mW
Repetitive Peak on state                        

Current                                                 f=100Hz

 tp=10µS ITRM200-1600 2.0 A
Storage and Operating Junction Temperature TSTG/TJ -40---+125/-40---110 °C

ELECTRICAL CHARACTERISTICS

Parameters

 Symbols Symbols

 

 Value UNITS

 
DB3 DB4 DB6
Breakover Voltage      *    VBO C=22nf * * Min 28 35 56 V
Typ 32 40 60
Max 36 45 70
Breakover Voltage Symmetry I+VBO I-

I-VBO I

 C=22nf * * Max

± 3

 V
Dynamic Breakover Voltage I ± ∆VI TSTG/TJ Min 5 V
Output Voltage Vo   Min 5 V
Breakover Current IBO   Max 100 µA
Rise Time tr   Typ 1.5 µS
Leakage Current IB   Max 10 µA

 

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